| 摘要 |
PURPOSE: A method for fabricating a capacitor is to improve electric characteristics by preventing the generation of a leakage current. CONSTITUTION: An interlayer dielectric(22) is formed on a semiconductor substrate(21). The first contact hole is formed by selectively removing the interlayer dielectric through a photolithography and an etching process to expose the predetermined surface of the semiconductor substrate. A polysilicon layer is formed on the entire surface of the semiconductor substrate including the first contact hole. Then, a polysilicon plug(24) is formed in the first contact hole by etching back the entire surface of the polysilicon layer. A TEOS(tetraethylortho silicate) layer is formed on the entire surface of the semiconductor substrate including the polysilicon plug. The second contact hole is formed by selectively removing the TEOS layer through the photolithoraphy and the etching process to expose the polysilicon plug and a predetermined surface of the interlayer dielectric adjacent thereto. A lower electrode(27) is formed in the second contact hole. A silicon nitride layer(28) and a Ta2O5 layer are formed on the lower electrode. A TaON layer(29a) is formed on the semiconductor substrate with the Ta2O5 formed thereon through a high temperature plasma NH3 process. An upper electrode(30) is formed on the Ta2ON layer.
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