METHOD FOR ANALYZING EXPOSURE PROCESS

摘要

PURPOSE: A method for analyzing an exposure process is to define a degree of pattern performance(DOPP) by quantifying a degree of pattern performance deviation using a value of a root mean square(RMS) which is set every a position of a chip. CONSTITUTION: After a proper design rule which is used for a reference exposing condition or an actual exposing process is calculated, a previously prepared mask is measured. At that time, an ideal CD(critical dimension) is obtained by using a simulation tool. The kinds of patterns to be obtained from a test result are inputted in the previously prepared mask. The kind comprises a combination of a line width or a contact width with pitches, lengths or trapezoidal patterns designed suitable to a demand of a cell pattern used in semiconductor device manufacture. Each pattern is measured using a previously designed exposing condition. The first DOPP value is calculated by substituting the measured value for a special equation.