| 摘要 |
PROBLEM TO BE SOLVED: To relieve the narrow channel effect of a charge transfer element and reduce the occupying area of a vertical CCD channel constituting a solid- state image pickup device by constituting the vertical CCD channel to have N+-type areas on both sides of an N-type well and, further, to improve the transfer efficiency of the transfer element by contriving the design of the channel structure in the connecting area of the vertical CCD channel with a horizontal CCD channel. SOLUTION: When, for example, the impurity constitution of the channel under the final gate electrode 14 of a vertical CCD having the N+-type areas 291 on both sides of the N-type well 24 is formed in such a way that the N+- type area occupies almost half of the channel on the horizontal CCD channel 41 side, the vertical CCD can be connected to a horizontal CCD without forming a potential barrier from the vertical CCD toward the horizontal CCD and the occurrence of transfer defects can be eliminated. In addition, the occurrence of vertical line-like abnormality, etc., called the black line defect can be suppressed.
|
