发明名称 POLISHING METHOD, WIRE FORMING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a technology which restricts a scratch, a peeling, a dishing and an erosion, and polishes at high polishing speed. SOLUTION: The polishing is made with a polishing liquid containing an oxidation substance, phosphoric and a protection film forming agent.</p>
申请公布号 JP2001185515(A) 申请公布日期 2001.07.06
申请号 JP19990368640 申请日期 1999.12.27
申请人 HITACHI LTD 发明人 KONDO SEIICHI;FUJIMORI MASASHIGE;SAKUMA NORIYUKI;HONMA YOSHIO
分类号 B24B37/00;B44C1/22;C09G1/04;C09K3/14;C23F1/18;C23F3/06;H01L21/302;H01L21/304;H01L21/3205;H01L21/321;H01L21/461;H01L21/768;H01L23/52;H01L23/532;(IPC1-7):H01L21/304;H01L21/320 主分类号 B24B37/00
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