| 摘要 |
PURPOSE: A method for manufacturing semiconductor devices is provided to reduce the step of manufacturing process and improve an electric characteristic by using a photosensitive pattern instead of a nitride film as a spacer to form source/drain regions. CONSTITUTION: A method for manufacturing semiconductor devices sequentially forms a gate oxide film(31) and a conductive film for gate on a semiconductor substrate(30). A photosensitive film pattern of a given shape is formed on the conductive film for gate. A main gate electrode(32A) and a sub gate electrode(32B) at both sides of the main gate electrode are patterned by lithography process. Low concentration impurity ions are injected using the photosensitive film pattern as a barrier film to form a low concentration source/drain region, a N region(35). The photosensitive film pattern is flowed by high temperature thermal process to form a spacer(33a) at a sidewall of the sub gate. High concentration impurity ions(36) are injected using the spacer to form a high concentration source/drain region(37).
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