| 摘要 |
PURPOSE: A method for forming an interlayer dielectric layer for a tantalum oxide capacitor is provided to allow employment of a boro phosphorous silicate glass(BPSG) layer as the interlayer dielectric layer between an upper electrode and a metal interconnection line. CONSTITUTION: In the method, the tantalum oxide capacitor having a lower electrode(23), a tantalum oxide dielectric layer(24) and the upper electrode(25) are formed on a semiconductor substrate(21). Then, the BPSG layer(26) is deposited over an entire structure including the tantalum oxide capacitor. Next, a rapid thermal process is performed so that the BPSG layer(26) is planarized and condensed. Preferably, the rapid thermal process uses a gas such as N2, O2, a mixture of Ar and O2, NH3, and a vapor of H2 and O2. In addition, the rapid thermal process is carried out at a temperature of 700-1100°C for 120 seconds or below.
|
