发明名称 |
III-V nitride semiconductor devices and process for the production thereof |
摘要 |
A device made of a III-V nitride compound semiconductor comprising a substrate of sapphire, a Si single crystal, a GaAs single crystal, or a GaP single crystal; a GaN single crystal film with a thickness not greater than 3 nm formed on the substrate; and at least one layer of a III-V nitride compound semiconductor formed on the GaN single crystal film. Also a device made of a III-V nitride compound semiconductor comprising a Si single crystal substrate having a natural oxide film; a SiOn film formed by partially nitriding the natural oxide film; and a layer of a III-V nitride compound semiconductor formed on the SiON film.
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申请公布号 |
US6255004(B1) |
申请公布日期 |
2001.07.03 |
申请号 |
US19980101662 |
申请日期 |
1998.07.14 |
申请人 |
THE FURUKAWA ELECTRIC CO., LTD. |
发明人 |
YOSHIDA SEIKOH |
分类号 |
H01L21/205;H01L33/00;(IPC1-7):H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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