发明名称 |
Shallow trench isolation using antireflection layer |
摘要 |
Shallow trench isolation among transistors and other devices on a semiconductor substrate is provided by initially forming a layer of highly absorbing silicon rich nitride to serve as a hardmask between a semiconductor substrate and a photoresist. The highly absorbing layer of silicon rich nitride has an extinction coefficient (k)>0.5. As reflected light passes through the layer of silicon rich nitride, a substantially amount of light is absorbed therein thereby blocking such reflected light from negatively interfering with patterning of the photoresist during photolithography. Following patterning of the photoresist, isolation trenches are formed in the semiconductor substrate by etching through the silicon rich nitride in accordance with the pattern formed on the photoresist.
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申请公布号 |
US6255717(B1) |
申请公布日期 |
2001.07.03 |
申请号 |
US19980200307 |
申请日期 |
1998.11.25 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
BABCOCK CARL P.;BHAKTA JAYENDRA D. |
分类号 |
H01L21/762;(IPC1-7):H01L23/58 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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