| 发明名称 |
SEMICONDUCTOR DEVICE AND PRODUCING METHOD THEREFOR |
| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide the electric fuse of a small area composed of a thin insulating film and a producing method therefor. SOLUTION: This device is provided with an active region 5 formed on a wafer 1, an isolation region 2 formed on the wafer 1 for isolating the active region 5, and gates 6A and 6B formed in the active region 5 through gate oxide films 7A and 7B, The gate oxide films 7A and 7B are operated as electric fuse.</p> |
| 申请公布号 |
JP2001176975(A) |
申请公布日期 |
2001.06.29 |
| 申请号 |
JP19990358760 |
申请日期 |
1999.12.17 |
| 申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
NAGAI TAKAHIRO;MAMETANI TOMOHARU;NAKADA YOJI;KIDO SHIGENORI;KISHIDA TAKESHI;KINUGASA AKINORI;NISHIMURA HIROAKI;MATSUFUSA JIRO |
| 分类号 |
H01L27/04;H01L21/82;H01L21/822;H01L23/525;H01L27/02;(IPC1-7):H01L21/82 |
主分类号 |
H01L27/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
