| 摘要 |
PROBLEM TO BE SOLVED: To provide a chemical amplification type resist material using sulfonyldiazomethane, excellent in resolution and focus margin because a carboxylic ester group is contained in each molecule, less liable to a change of line width and shape distortion even in the case of long-time PED, nearly free form foreign matter after coating, after development and after removal, excellent in pattern profile shape after development, having high resolution suitable for microfabrication and effective in far UV lithography. SOLUTION: The resist material contains a sulfonyldiazomethane compound of formula 1 (where R1 is a 1-10C alkyl or a 6-14C aryl; R2 is a 1-6C alkyl; G is SO2 or CO; R3 is a 1-10C alkyl or a 6-14C aryl; (p) is an integer of 0-4; (q) is an integer of 1-5, 1<=p+q<=5; and (n) is 1 or 2) as a photo-acid generating agent. |
