DRAIN-EXPANDED TRANSISTOR FOR INTEGRATED CIRCUIT

摘要

PROBLEM TO BE SOLVED: To provide a drain-expanded transistor for an integrated circuit for a submicron CMOS process. SOLUTION: A transistor gate 40 is made to cover a CMOS n-type well region 80 and a CMOS p-type well region 70 within a silicon substrate 10. Transistor source regions 50 and 140 and drain regions 55 and 145 are made within each kind of CMOS well regions, thus making a drain-expanded transistor. Here, the CMOS well regions 70 and 80 function as the drain-expanded regions of the transistor.