| 摘要 |
PURPOSE: To obtain a method for improving metal deposition on a patterned dielectric layer, especially an aperture such as a via or a trench having an aspect ratio larger than about 1.0. CONSTITUTION: The invention generally provides a method for improving fill and electrical performance of metals deposited on patterned dielectric layers. Apertures such as vias and trenches in the patterned dielectric layers are etched to enhance filling and then cleaned in the same chamber to reduce metal oxides within the aperture. The invention also provides a step 212 for cleaning the patterned dielectric layer in a processing chamber with a first plasma consisting essentially of argon, a step 215 for cleaning the patterned dielectric layer in the processing chamber with a second plasma consisting essentially of hydrogen and helium, a step 220 for depositing a barrier layer on the patterned dielectric layer after exposing the dielectric layer to the first plasma and the second plasma, and a step 225 for depositing a metal on the barrier layer.
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