DEVICE FOR SELF-REFERENCE FOR FERROELECTRIC MEMORY CELL

摘要

PROBLEM TO BE SOLVED: To provide a device for self-reference for a ferroelectric memory cell which does not depend on the secular change of a memory cell and in which a hysteresis region is utilized as much as possible to obtain reference voltage. SOLUTION: While a bit line is pre-charged by two different voltage being the exact opposite each other having a first voltage value and a second voltage value, read-out can be performed in a memory cell, two voltage values obtained in this case are attained by enabling buffer to a first or a second capacitor respectively before these two voltage values are supplied to an evaluator to be compared.