| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique by which an insulating film can be buried satisfactorily in the element isolation groove, wiring-to-wiring space, etc., of a substrate. SOLUTION: A silicon oxide film is deposited on a substrate on which an element isolation groove having a very narrow width is formed by the CVD method using a mixed gas containing triethoxysilane and ozone. |
