| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor light-emitting device without any absorption of emission light from an active layer and with improved cooling properties. SOLUTION: A light-emitting diode device is transparent to emission light and has relatively high thermal conductivity, and a substrate 11 made of n-type GaN where the orientation of a main surface has (0001) face. On the substrate 11, a buffer layer 12 that is made of an n-type GaAs as thick as approximately 1 μm and relaxes the lattice mismatching between the substrate 11 and each semiconductor layer on the substrate 11, a first clad layer 13 that is made of an n-type AlGaAS that is approximately 0.5 μm and entraps carriers contributing to emission into a light emission layer 14, the light emission layer 14 that is made of undoped AlGaAs that is as thick as approximately 0.1 μm and generates emission light by recombining the entrapped carriers, and a second clad layer 15 that is made of a p-type AlGaAs with a thickness of approximately 0.5 μm and entraps the carriers into the light emission layer 14 are successively formed. |
