发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 <p>In order to shorten the fabrication time of a semiconductor integrated circuit device, each circuit cell is made upper of a plurality of sub-cells (SCC, SCG, SCH) used commonly by a plurality of circuit cells and the pattern of the circuit cell is transferred by exposing every pattern of sub-cells (SCC, SCG, SCH) through partial batch exposure. One sub-cell can be used for partial batch exposure of a plurality circuit cells. As compared with a structure where sub-cells are formed by simply decomposing a circuit cell, the number of partial batch exposure patterns (sub-cells) required for a partial batch exposure mask can be decreased significantly.</p>
申请公布号 WO2001041198(P1) 申请公布日期 2001.06.07
申请号 JP2000008466 申请日期 2000.11.30
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