发明名称 |
Semiconductor optical device having a compound semiconductor layer including aluminium |
摘要 |
<p>A selective growth process for depositing a compound semiconductor layer (32) or a semiconductor optical device including A1 includes the step of introducing a mixture of source gas for the compound semiconductor layer (32) and halogen compound gas including carbon and halogen. The halogen compound gas suppresses deposition of polycrystalline substance and allows a higher growth rate at a lower temperature. The process is applied to burying process, selective area growth process and butt joint growth process. <IMAGE></p> |
申请公布号 |
EP1104058(A2) |
申请公布日期 |
2001.05.30 |
申请号 |
EP20000125881 |
申请日期 |
2000.11.25 |
申请人 |
THE FURUKAWA ELECTRIC CO., LTD. |
发明人 |
ARAKAWA, SATOSHI;ISHIKAWA, TAKUYA;ITO, MITSUMASA;KASUKAWA, AKIHIKO |
分类号 |
H01S5/20;H01S5/22;H01S5/223;H01S5/227;H01S5/343;(IPC1-7):H01S5/223;H01L33/00;H01S5/323 |
主分类号 |
H01S5/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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