| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for which a burn-in time can be shortened by performing burn-in of a logic circuit and burn-in of a DRAM- macro in a logic mix memory of a logic circuit and a DRAM-macro. SOLUTION: This device is a logic mix DRAM, and constituted of a logic circuit 1, a DRAM-macro 2, a sequencer 3 for performing burn-in operation of the DRAM-macro 2, a counter 4, a selector 5 selecting the prescribed signal at the time of normal operation and burn-in operation, and the like, as signals for burn-in operation outputted from the sequencer 3 and the counter 4 and a burn-in signal are made a voltage level of 'L' and they can be selected by the selector 5, burn-in of the logic circuit 1 and the DRAM-macro 2 can be performed simultaneously, by inputting in parallel the burn-in pattern of the logic circuit 1 and inputting a burn-in pattern of the DRAM-macro 2.
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