| 摘要 |
PROBLEM TO BE SOLVED: To provide a mirror surface grinding method of a semiconductor wafer to improve the flatness of the semiconductor wafer by preventing the grinding of only an outer circumferential surface to be mirror-ground of the semiconductor wafer from being promoted. SOLUTION: In the mirror-surface grinding method of the semiconductor wafer to finish the surface of the semiconductor wafer to a mirror surface high in flatness by pressing the semiconductor wafer 3 against an abrasive cloth 2 adhered to the surface of a surface table while moving the wafer, the semiconductor wafer 3 is moved in the whole area of the abrasive cloth 2, and a part of the semiconductor wafer is moved to the range L1 projected from the outer peripheral edge of the abrasive cloth. By projecting (overhanging) the outer peripheral art of the semiconductor wafer 3 from the outer peripheral edge of the abrasive cloth, the grinding of the outer peripheral part is delayed, and the excessive grinding quantity of the outer peripheral part of the semiconductor wafer is canceled to prevent the degradation of the accuracy in flatness. |
