| 摘要 |
PURPOSE: A semiconductor memory structure is provided to reduce an etching amount in etching a contact by lowering a step difference of a region to be connected to a source without forming a common source region. CONSTITUTION: A plurality of polycrystalline silicon separating structures(2) having a cross shape is disposed at a predetermined interval on the a substrate(1). A plurality of floating gates is spaced and disposed at a predetermined distance from a long horizontal pattern and a long vertical pattern. A plurality of drains is disposed between the polycrystalline silicon separating structures and the floating gates. A plurality of sources(7) is disposed between the polycrystalline silicon separating structures. A separating structure contact(10) is connected to the polycrystalline silicon separating structure. A source contact(11) is connected to the source. An interconnection(12) connects the separating structure contact with the source contact. A ground voltage contact(13) comes in contact with the interconnection.
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