| 摘要 |
PROBLEM TO BE SOLVED: To provide a heat-treating equipment, a heat-treating method and a manufacturing method of a semiconductor device in which reduction of life time of minority carrier in a wafer during the whole heat treatment process is avoided, a hydrogen treatment process is omitted from the manufacturing process of a semiconductor device, and a temperature of hydrogen treatment can be lowered. SOLUTION: A means is installed which is provided with piping for supplying oxygen to the inside of chambers of the whole equipment to which heat at 500 deg.C or higher is applied in the course of manufacturing a wafer, and performs oxygen blowing for a specified period of time just after treatment such as vapor growth is finished.
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