| 摘要 |
A method for manufacturing an integrated circuit capacitor is provided in the present invention. First, a semiconductor substrate is etched to form a contact hole. A polysilicon contact is then formed to fill into the contact hole. A metal layer is formed on the substrate and the polysilicon contact. Next, a silicon catching layer is formed on the metal layer. An annealing step is performed to substitute the silicon contact with a portion of said metal layer for forming a metal contact, wherein the silicon atom are driven to react with the silicon catching layer for forming a compound layer underneath the silicon catching layer. After the metal layer, the silicon catching layer and the compound layer are removed, the first conduction layer is formed on the substrate and the metal contact to serve as a bottom electrode. Then, a dielectric layer is formed along the surface of the first conduction layer. The second conduction layer is next formed on the dielectric layer to serve as a top electrode.
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