发明名称 METHOD FOR PRODUCING COBALT-BASED ALLOY SPUTTER TARGET
摘要 <p>An ingot of material which is normally too brittle to allow successful rolling and wrought processing is formed so as to have a thickness-to-width ratio of less than about 0.5 and is annealed in a temperature range of 1000 °F to 2500 °F for a preselected time. The ingot is then rolled in a temperature range of 1500 °F to 2500 °F. Additional/optional annealing of the resulting rolled plate in a temperature range of 500 °F to 2000 °F, or between room temperature and 1500 °F, and/or a final annealing between 500 °F and 1500 °F, is possible. Sputtering targets are cut out of the rolled plate and used for the manufacture of storage disks.</p>
申请公布号 WO2001025501(A1) 申请公布日期 2001.04.12
申请号 US2000025668 申请日期 2000.09.20
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