METHOD FOR FABRICATING DRAM CELL CAPACITOR

摘要

PURPOSE: A method for fabricating a DRAM cell capacitor is provided to prevent a fall-down phenomenon of a storage electrode by increasing a mis-alignment margin between a storage electrode contact hole and a storage electrode. CONSTITUTION: A storage electrode pad(103) is formed on a semiconductor substrate(100) including cell transistors. The first oxide layer(104) is formed on the semiconductor substrate(100). A conductive layer pattern(106) is formed on the first oxide layer(104). The second oxide layer(108) is formed on the first oxide layer(104) and the bit line pattern(106). The first anti-reflective coating layer is formed on the second oxide layer(108). A storage electrode contact hole(111) is formed by etching the first anti-reflective layer, the second oxide layer(108), and the first oxide layer(104). A storage electrode poly is formed on the first anti-reflective layer. The second anti-reflective layer(113) is formed on the storage electrode poly. A photoresist layer pattern(114) is formed on the second anti-reflective layer(113). A storage electrode(112) is formed by performing a dry etch process.