| 摘要 |
The partial replacement of partially defective integrated circuit devices, such as memory devices, is disclosed. In one embodiment, the data lines coupled to different sections of the memory array of a memory device have inserted in series therein normally closed links. If a section is found to be defective, then the link for the data line coupled to the section is opened. This permits a repair device to be coupled to the memory device such that only the defective section is replaced. The address and control lines of the repair device are coupled to their counterpart lines of the memory device. However, a data line of the repair device is coupled to a data line of the memory device only if the data line of the memory device is coupled to a defective section.
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