发明名称 METHOD AND EQUIPMENT FOR FILM DEPOSITION
摘要 PROBLEM TO BE SOLVED: To improve deposition rate without causing elongation and breakage of a film by carrying out thin film deposition on a film stretched inside a vacuum part while cooling the film by allowing a cooling jig to contact closely to the side, on the side requiring no deposition, of the film. SOLUTION: The inside of a vacuum chamber 5 is formed into vacuum state by working a vacuum pump 1 to evacuate the chamber through an exhaust hole 3. While cooling a film 8 contacting closely to one side of a cooling plate 16 by cooling the cooling plate 16 by allowing cooling water 19 to flow through a cooling water channel by means of a cooling shaft 20, Ar gas is introduced via a gas introducing hole 4 and sputtering is carried out to deposit a thin film composed of the material of the target 7 onto the film 8. Because deposition is performed while cooling the film 8, the temperature rise of the film 8 due to deposition can be minimized, and further, the film 8 can return to its former state by the elasticity of its own when the film 8 is removed from the cooling plate 16. Suitable shape of the one side of the cooling jig 10 is a spherical shape.
申请公布号 JP2001081552(A) 申请公布日期 2001.03.27
申请号 JP19990256439 申请日期 1999.09.10
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 NAKANO YOSHIYUKI;SHIBAZAKI HATSUHIKO;OKUDA AKIRA
分类号 C23C14/34;C23C14/24;(IPC1-7):C23C14/34 主分类号 C23C14/34
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