| 摘要 |
PROBLEM TO BE SOLVED: To change from a light-emitting point image-measuring state to a far visual-field image-measuring state, with excellent reproducibility and accuracy kept, in a semiconductor laser characteristic-measuring method where the far visual-field image of laser light emitted from a semiconductor laser element is measured after a light-emitting point image is measured. SOLUTION: The position coordinates of a light emitting point image of a semiconductor laser 10 on a CCD picture image are measured, then a correction plate 30 as a parallel flat plate is extracted out from an optical path between a condensing lens 40 and the semiconductor laser 10, and a far visual-field image is measured as a CCD picture image. The coordinates of a far visual-field image peak are measured on a CCD picture image, a deviation angle of the optical axis of a semiconductor laser is measured based on the coordinates of a light-emitting point image and the coordinates of the far visual-field image peak on a CCD picture image. A far visual-field image characteristic is measured based on the CCD picture image of the far field image.
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