发明名称 SPLIT-GATE TYPE NONVOLATILE SEMICONDUCTOR STORAGE DEVICE
摘要 PROBLEM TO BE SOLVED: To decrease cell area, while increasing the capacitive coupling ratio. SOLUTION: On the side face of a control gate electrode 13 which corresponds to a first active region 12A, where the control gates 13 are facing each other, a first floating gate electrode 14A is formed through an interposed tunnel insulation film, extending over the center line of an isolation region 11 to the second active region 12B side. On the side face of the control gate electrode 13 opposite to first floating gate electrode 14A and corresponding to the second active region 12B contiguous to the first active region 12A in the widthwise direction of gate, a second floating gate electrode 14B is formed through the tunnel insulation film, extending over the center line of the isolation region 11 to the first active region 12A side.
申请公布号 JP2001068569(A) 申请公布日期 2001.03.16
申请号 JP19990245009 申请日期 1999.08.31
申请人 MATSUSHITA ELECTRIC IND CO LTD;HALO LSI DESIGN & DEVICE TECHNOL INC 发明人 SHIMANO AKIO
分类号 H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/824 主分类号 H01L21/8247
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