Vertical layer structure for silicon-based bipolar transistors contains one or more monolayers consisting of doping atoms

摘要

Vertical layer structure contains one or more monolayers consisting of doping atoms. An Independent claim is also included for a process for the production of the vertical layer structure comprising producing the monolayers by interrupting the growth of an epitaxial layer stack and adsorption of gaseous doping material compounds. Preferred Features: The monolayers can be inserted into SiGe heterolayers.