| 摘要 |
<p>A CMOS image sensor is provided to stably transfer a signal by removing contact defects between a floating node and a gate pattern of a driving transistor. A photodiode(PD1,PD2) is formed in a substrate. A gate pattern(Tx1,Tx2) of a transfer transistor is formed on one surface of the photodiode. A gate pattern(Dx) of a driving transistor is separated from the gate pattern of the transfer transistor. A floating node comes in butting-contact with the gate pattern of the driving transistor by a contact plug, formed in a gap between the gate pattern of the transfer transistor and the gate pattern of the driving transistor.</p> |
