| 摘要 |
<p>A process for the synthesis of carbon coatings on the surface of metal carbides, preferably SiC, by etching in a halogen-containing gaseous etchant, and optionally hydrogen gas, leading to the formation of a carbon layer on the metal carbide. The reaction is performed in gas mixtures containing about 0 % (trace) amounts to 100 % halogen-containing gaseous etchant, e.g., Cl2, and about 0 % to 99.9 % H2 (hydrogen gas) at temperatures from about 100 °C to about 4,000 °C, preferably about 800 °C to about 1,200 °C, over any time range, maintaining a pressure of preferably about one atmosphere, to about 100 atmospheres.</p> |
