发明名称 |
Diamond PN junction diode and method for the fabrication thereof |
摘要 |
<p>A diamond pn junction diode (20) includes a p-type diamond thin-film layer (21) formed on a substrate (11) and an n-type diamond thin-film layer (22) formed by forming a high-quality undoped diamond thin-film layer (22i) on the p-type diamond thin-film layer and ion-implanting an impurity into the high-quality undoped diamond thin-film layer, or alternatively includes an n-type diamond thin-film layer (22) formed on a substrate (11) and a p-type diamond thin-film layer (21) formed by forming a high-quality undoped diamond thin-film layer (22i) on the n-type diamond thin-film layer and ion-implanting an impurity into the high-quality undoped diamond thin-film layer. A method of fabricating a diamond pn junction diode (20) includes the steps of forming a p-type diamond thin-film layer (21) on a substrate (11), forming a high-quality undoped diamond thin-film layer (22i) on the p-type diamond thin-film layer, and making the high-quality undoped diamond thin-film layer an n-type diamond thin-film layer (22) by ion implantation of an impurity, or alternatively includes the steps of forming an n-type diamond thin-film layer (22) on a substrate (11), forming a high-quality undoped diamond thin-film layer (22i) on the n-type diamond thin-film layer, and making the high-quality undoped diamond thin-film layer a p-type diamond thin-film layer (21) by ion implantation of an impurity. <IMAGE></p> |
申请公布号 |
EP1081747(A1) |
申请公布日期 |
2001.03.07 |
申请号 |
EP20000307456 |
申请日期 |
2000.08.30 |
申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY;JAPAN SCIENCE AND TECHNOLOGY CORPORATION |
发明人 |
TAKEUCHI, DAISUKE;WATANBE, HIDEYUKI;OKUSHI, HIDEYO;HASEGAWA, MASATAKA;OGURA, MASAHIKO;KOBAYASHI, NAOTO;KAJIMURA, KOJI;YAMANAKA, SADANORI |
分类号 |
H01L21/04;H01L21/329;H01L29/16;H01L29/861;H01L31/10;H01L33/34;H01L33/40;H01S5/30;(IPC1-7):H01L21/04;H01S3/16 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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