METHOD FOR MANUFACTURING SHALLOW-TRENCH-ISOLATION TYPE ISOLATION LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a shallow-trench-isolation(STI) type isolation layer of a semiconductor device is provided to increase yield of an isolating process, by eliminating a pit-type defective portion generated on the substrate of a trench while using dry-etch and wet-etch oxide processes. CONSTITUTION: An oxide layer(22) and a nitride layer are sequentially stacked on a semiconductor substrate(10). After the nitride layer and the oxide layer are patterned by using a photolithography process using an isolation mask, a trench of a predetermined depth is formed. A dry oxide process is performed in a high temperature to form the first oxide thin film within the trench. The first oxide thin film is removed by a wet etch process. A wet etch process is performed in a low temperature to form the second oxide thin film(20) inside the trench. After a gap fill oxide layer is filled in the trench and planarized, the nitride layer is eliminated to form an isolating layer on the substrate.