| 摘要 |
PURPOSE: To provide a semiconductor device where a scoop does not occur in a via plug at manufacture, and borderless wiring structure having satisfactory electromigration resistance and being highly reliable can be obtained, and its manufacture. CONSTITUTION: A semiconductor device has a first wiring layer 13, an interlayer insulating layer 15 made on the first wiring layer 13, a via plug 16a made inside the interlayer insulating film 15 and made on the first wiring laeyr 13, and second wiring layers 17 and 19 connected with the via plug 16a. The second wiring layers 17 and 19 constitute the first metallic layer 17, consisting of metal different from the via plug 16a and the second metallic layer 19 and on the first metallic layer 17 and consisting of the metal different from the first metallic layer 17, respectively, and the first metallic layer 17 and the second metallic layer 19, and the first metallic layer 17 and the via plug 16a form an alloy, severally.
|
