发明名称 HEATING ELEMENT CVD DEVICE AND METHOD FOR REMOVING DEPOSITION FILM
摘要 PROBLEM TO BE SOLVED: To provide a method for removing a deposition film capable of removing a film deposited on the inside of a treating device with high efficiency, furthermore to provide a heating element CVD device capable of in situ cleaning and to provide a cleaning method therefor. SOLUTION: The inside of a treating chamber 1 is disposed with a heating element 3 in which at least the surface is composed of platinum, the inside of the treating chamber is exhausted, thereafter, the heating element is heated and held, cleaning gas, by which active seed produced by being decomposed and/or activated by the heating element is brought into reaction with the deposition film, and the deposition film is converted into a gaseous substance, is introduced, and the produced gaseous substance is exhaused, by which the deposition film is removed.
申请公布号 JP2001049437(A) 申请公布日期 2001.02.20
申请号 JP19990222088 申请日期 1999.08.05
申请人 ANELVA CORP;JAPAN SCIENCE & TECHNOLOGY CORP 发明人 ISHIBASHI KEIJI
分类号 B08B5/00;B01J3/00;B05D7/22;B08B9/00;C01B7/00;C23C16/44;C23C16/448;H01L21/205;H05B3/12;(IPC1-7):C23C16/44 主分类号 B08B5/00
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