| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser array of superior characteristics, that is provided with a plurality of semiconductor laser elements emitting laser beams different from one another in light-emitting wavelength and manufactured in a simple process, as compared with the conventional laser array. SOLUTION: In this semiconductor laser element array 2, a first laser part 3 emitting laser beam of 650 nm and a second laser part 4 emitting laser beam of 780 nm are provided to a stripe-shaped recessed part 1a and a stripe-shaped protruding part 1b formed on a GaAs substrate 1, respectively. The first laser part contains a first laminated structure 3a, whose constitution is same as that of an AlGaAs system laminated structure 4a of the second laser part, placed on the recessed part, and AlGaInP system second laminated structure 3b placed thereon. The second laser part contains an AlGaAs system laminated structure 4a on the protruding part. A lower layer film of the second laminated structure 3b of the first laser part 3 is in contact electrically with a film of the same conductive type as it of the laminated structure 4a of the second layer part 4 with a non-growth surface 50 in between. The first laser part and the second laser part are provided with p-side electrodes 5 and 6, respectively, and further an n-side common electrode 7 is provided on the rear surface of the substrate 1.
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