| 摘要 |
<p>PROBLEM TO BE SOLVED: To restrict generation of defects in a waveguide part or a lattice around it, by a method wherein a strip-like ridge part is provided in upper parts of a first conductive clad layer, composed of a nitride group semiconductor material and a second conductive clad layer laminated on an active layer, and a plurality of recesses and projections are formed in a side face thereof, in particular, the entire region of the side face. SOLUTION: A buffer layer, an I-type GaN layer, an n-type GaN layer, an n-type clad layer 5, an active layer 6, a p-type clad layer 7 and a p-type cap layer 8 are sequentially laminated on a substrate 1, and a mask 16 is formed at a prescribed position of the p-type cap layer 8. This mask 16 is slit-like in shape, extending in a resonator length direction, and a recess 16a is formed away from a prescribed interval on both side. Next, the mask 16, excluding a downward part is removed down to a prescribed depth of the (p) type clad layer 7 by reactive ion etching, whereby a stripe-like ridge part 9 is formed so as to extend in the resonator length direction. Thus, there is formed a groove 15 at a position corresponding to the recess 16a of the mask 16 on both side face 9a of the ridge 9.</p> |
