| 摘要 |
A high power rectifier device has an N<-> drift layer on an N<+> layer. A number of trench structures are recessed into the drift layer opposite the N<+> layer; respective mesa regions separate each pair of trenches. Each trench structure includes oxide side-walls, a shallow P<+> region at the bottom of the trench, and a conductive material between the top of the trench and its shallow P<+> region. A metal layer contacts the trench structures and mesa regions, forming Schottky contacts. Forward conduction through both Schottky and P<+> regions occurs when the device is forward-biased, with the Schottky contact's low barrier height providing a low forward voltage drop. When reversed-biased, depletion regions around the shallow P<+> regions and the side-walls provide a potential barrier which shields the Schottky contacts, providing a high reverse blocking voltage and reducing reverse leakage current. |
