| 摘要 |
PROBLEM TO BE SOLVED: To lessen the effects of reverse bias. SOLUTION: A diode 16 is inserted interposedly between the drain electrode of a switching element 11, that is included in a level shifter and the gate electrodes 40, 41 of MOS transistors 14, 15 that are part of an amplifier. The switching element 11, the diode 16 and the MOS transistors 14, 16 are mounted on a singe semiconductor substrate. This substrate is formed as an SOI substrate, and the switching element 11 and diode 16 to which a high voltage is impressed are isolated from other elements by trench isolation regions 34, 72, 73. |
