发明名称 METHOD AND DEVICE FOR TREATING SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To uniformly form an interlayer insulating film, etc., having a high adhesive property to the surface of a substrate by spreading a first treatment solution on the surface of the substrate and, after adjusting the surface of the substrate to a prescribed substrate temperature, a second treatment solution on the surface of the substrate. SOLUTION: After a wafer W is carried in a first film forming device and housed in a cup by means of a spin chuck which vacuum-chucks the wafer W, an adhesive promoter(ADP) solution adjusted to a specific temperature is spread on the whole surface of the wafer by rotating the wafer W by means of the spin chuck while the ADP solution is supplied to the surface of the wafer W. Thereafter, the surface temperature of the wafer W is adjusted to a prescribed substrate temperature by heating or cooling the wafer W. Then the wafer W is carried in a second film forming device and housed in a cup by means of a spine chuck which chucks the wafer W in vacuum. After the wafer W is housed in the cup, an applied solution is spread on the whole surface of the wafer W by rotating the wafer W by means of the spin chuck while the solution is supplied to the surface of the wafer W.
申请公布号 JP2001023883(A) 申请公布日期 2001.01.26
申请号 JP19990193671 申请日期 1999.07.07
申请人 TOKYO ELECTRON LTD 发明人 NAGASHIMA SHINJI
分类号 H01L21/027;G03F7/16;H01L21/00;H01L21/312;H01L21/3213 主分类号 H01L21/027
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