| 摘要 |
<p>A process simulation method when an oxide film is formed on a surface of a semiconductor material, is attained by (a) setting of a specified film thickness of an oxide film, and a time interval as a time increment; by (b) incrementing a current time by the time increment; by (c) calculating a surface oxidant concentration at the current time using the oxidant diffusion equation: by (d) calculating the effective film thickness of the oxide film at the specified position at the current time from the surface oxidant concentration; by (e) comparing the effective film thickness and the specified film thickness; and by (f) setting the time increment to a half of the time interval, when the effective film thickness is larger than the specified film thickness. The process simulation method may further include: (g) repeating the steps (b) to (e). Also, the process simulation method may further include: (h) carrying out oxidation reaction rate calculation, production of a new boundary and a deformation calculation, when the effective film thickness is not larger than the specified film thickness. <IMAGE></p> |
