| 发明名称 |
Method and apparatus for forming a conductive via comprising a refractory metal |
| 摘要 |
<p>In a method of performing an in-situ etch of a CVD chamber in a cold-wall type processing system for cleaning said chamber the walls of the chamber are heated to a temperature of between approximately 65 DEG C and approximately 90 DEG C and fluorine-based etching gas is injected into the chamber (104). An RF power to energize the etching gas is then supplied. <IMAGE></p> |
| 申请公布号 |
EP1069611(A2) |
申请公布日期 |
2001.01.17 |
| 申请号 |
EP20000203544 |
申请日期 |
1990.12.28 |
| 申请人 |
LSI LOGIC CORPORATION |
发明人 |
HANSEN, KEITH J. |
| 分类号 |
B05D5/12;C23C16/04;C23C16/06;C23C16/08;C23C16/44;C23C16/455;H01L21/205;H01L21/28;H01L21/285;H01L21/768;H01L23/522;(IPC1-7):H01L21/768;C23C16/02;H01L21/320;C23C16/48;C23C14/02;C23C16/505;H01J37/32;C30B25/14;C23C16/52 |
主分类号 |
B05D5/12 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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