发明名称 |
Method of making high performance MOSFET with polished gate and source/drain feature |
摘要 |
A transistor and a method of making the same are provided. The method includes the steps of forming a gate dielectric stack on the substrate that has a gate dielectric layer and forming first and second sidewall spacers adjacent the gate dielectric stack. A first portion of the gate dielectric stack is removed while a second portion thereof is left in place. First and second source/drain regions are formed in the substrate, and a conductor layer is formed over the first and second source/drain regions and on the second portion of the gate dielectric stack. The gate dielectric may be composed of a high dielectric constant material with a thin equivalent thickness of oxide. The method enables integrated processing of the gate electrode and source/drain metallization.
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申请公布号 |
US6174794(B1) |
申请公布日期 |
2001.01.16 |
申请号 |
US19980137275 |
申请日期 |
1998.08.20 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
GARDNER MARK I.;GILMER MARK C. |
分类号 |
H01L21/28;H01L21/285;H01L21/336;H01L21/768;H01L29/51;(IPC1-7):H01L21/320 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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