Methods of forming trench isolation structures by etching back electrically insulating layers using etching masks,申请号US09/216192-传众专利搜索

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发明名称	Methods of forming trench isolation structures by etching back electrically insulating layers using etching masks
摘要
申请公布号	US6169002(A)	申请公布日期	2001.01.02
申请号	US09/216192	申请日期	1998.12.18
申请人		发明人
分类号		主分类号
代理机构		代理人
主权项
地址

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