Self-aligned non-selective thin-epi-base silicon germanium (SiGe) heterojunction bipolar transistor BicMOS process using silicon dioxide etchback,申请号US09/340344-传众专利搜索

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发明名称	Self-aligned non-selective thin-epi-base silicon germanium (SiGe) heterojunction bipolar transistor BicMOS process using silicon dioxide etchback
摘要
申请公布号	US6169007(A)	申请公布日期	2001.01.02
申请号	US09/340344	申请日期	1999.06.25
申请人		发明人
分类号		主分类号
代理机构		代理人
主权项
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