| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a semiconductor device easily with good controllability which can be easily operated by a single power source and has an excellent distortion property, high power efficiency, and improved performance. SOLUTION: A second barrier layer 22 made of AlGaAs, a channel layer 23 made of undoped InGaAs, a first barrier layer 24 made of AlGaAs, and a surface layer 25 made of GaAs, are laminated in sequence on a substrate 11. In response to a gate electrode 15, a p-type layer 26a made of p-type AlGaAs is buried in the first barrier layer 24, and a p-type contact layer 26b made of p-type GaAs is buried in the surface layer 25. The p-type layer 26a can increase a built-in voltage. The p-type contact layer 26b can reduce the contact resistance with the gate electrode 15 and prevent the oxidation of the p-type layer 26a. |
