发明名称 Process and device for producing a cylindrical single crystal and process for cutting semiconductor wafers
摘要 A process and a device will produce a cylindrical single crystal of semiconductor material with the smallest possible alignment error of the crystal lattice. A process for cutting semiconductor wafers from two or more such single crystals is by means of wire sawing. The process for producing the single crystal is as follows: (a) a single crystal with an alignment error of the crystal lattice equal to at most 1.5 DEG is produced; (b) the single crystal is arranged in such a way that the single crystal can be rotated about two axes of rotation, the axes of rotation being perpendicular to two planes that are spanned by two axes of an orthogonal coordinate system with axes x, y and z; (c) the single crystal is rotated about the axes of rotation until the crystal axis is parallel to the x,y plane and parallel to the x,z plane of the coordinate system; (d) pads are fitted to the ends of the single crystal; and (e) the single crystal is rotated about the crystal axis, the single crystal being clamped between the pads in a grinding machine, and a lateral surface of the single crystal is ground until the single crystal has a specific uniform diameter.
申请公布号 US6159284(A) 申请公布日期 2000.12.12
申请号 US19990318657 申请日期 1999.05.25
申请人 WACKER SILTRONIC GESELLSCHAFT FUER HALBLEITERMATERIALIEN AG 发明人 OELKRUG, HANS;LUNDT, HOLGER;ANDRAE, CHRISTIAN;FRUMM, JOSEF
分类号 H01L21/304;B24B47/22;B24B49/12;B28D5/00;C30B33/00;G01N23/20;(IPC1-7):C30B15/36 主分类号 H01L21/304
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