| 摘要 |
A dynamic random access memory (DRAM) circuit is provided that utilizes a testing system and method to determine the sensitivity of a sense amplifier. More specifically, the DRAM circuit, in determining the sensitivity of the sense amplifier, utilizes a testing system to independently control the magnitude of a voltage differential appearing between a pair of bit lines and sensed by the sense amplifier. The sensitivity of the sense amplifier is then able to be determined by monitoring an input/output signal in response to sensing the known voltage differential. The testing system controls the magnitude of the voltage differential appearing between the bit lines by enabling a first dummy cell to transfer a first reference charge onto a first bit line and by enabling a second dummy cell to transfer a second reference charge onto a second bit line. |
