| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a high-performance, reliable semiconductor device by forming a film or a layer and then polishing the film or layer at an unwanted region by the CMP method, and removing the surface machined deformed layer on the film or the layer by the sputter etching method. SOLUTION: An insulating film or an insulation layer 8 is formed on a semiconductor substrate 1. Then, the insulation layer 8 at an unwanted region is polished by the CMP method for removal. After that, cleaning is done, after the CMP method was used. In this case, a surface machining deterioration film 8a with a contamination film that is a contamination film and the roughness of a surface roughness state (a state with recessed and projecting surfaces) is formed on the surface of the insulation layer 8, that is made of, for example, a silicon oxide film by the process for polishing the insulation layer 8 at the unwanted region by using the CMP method. Then, a process for removing the surface machining deterioration film 8a of the insulation film 8 is made by the sputter etching method.
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