| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a TFT, in which gate-voltage vs. drain-current characteristics degradation caused by localized self-heating or hot carriers is prevented, and an active matrix substrate and an optoelectronic apparatus using the TFT. SOLUTION: A plurality of high concentration source/drain regions 122 are formed along the channel-width direction, keeping a prescribed distance between each on a semiconductor layer 20 of polysilicon which constitutes the active layer of a TFT 1. Each of the high-concentration source/drain regions 122 is formed at an offset position, as seen from an edge of the gate electrode 15 along the channel length direction. A plurality of contact holes 19 are formed, corresponding to the high-concentration source/drain regions 122. In the semiconductor layer 20, regions facing the edges of the gate electrode 15 and regions lying between neighboring high-concentration source/drain regions 122 in the channel width direction are low-concentration regions.</p> |
